ENHANCED OXIDATION OF ION-IMPLANTED SI-FACE OF 6H-SIC

被引：19
作者：
UENO, K
SEKI, Y
机构：
[1] Fuji Electric Corporate Research and Development Ltd, Matsumoto City, Nagano, 390
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1994年 / 33卷 / 8A期
关键词：
ENHANCED OXIDATION; ION IMPLANTATION; 6H-SIC; SI-FACE; AMORPHOUS; DAMAGE; SELECTIVE OXIDATION;
D O I：
10.1143/JJAP.33.L1121
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The Si-face of 6H-SiC is slowly oxidized even at temperatures as high as 1200-degrees-C in steam. We found that the oxidation rate of the implanted Si-face is several times faster than that of the non-implanted face. This oxidation rate strongly depends on the mass number of the implanted ion, and on the acceleration energy. Based on the study of the oxidation rate, dosage and acceleration energy dependence, this phenomenon is concluded to be induced by the amorphous layer of the implanted region. We demonstrated the selective oxidation technique utilizing this phenomenon in its application to various devices.
引用
收藏
页码：L1121 / L1123
页数：3
相关论文
共 14 条
[1]   ION IMPLANTATION EFFECTS OF NITROGEN, BORON, AND ALUMINUM IN HEXAGONAL SILICON-CARBIDE [J].
ADDAMIANO, A ;
ANDERSON, GW ;
LUCKE, W ;
COMAS, J ;
HUGHES, HL .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (10) :1355-+
[2]   COMPARISON OF 6H-SIC, 3C-SIC, AND SI FOR POWER DEVICES [J].
BHATNAGAR, M ;
BALIGA, BJ .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (03) :645-655
[3]  
Bohn H. G., 1987, Journal of Materials Research, V2, P107, DOI 10.1557/JMR.1987.0107
[4]  
CHOW TP, 1983, 5TH P INT S POW SEM, P84
[5]   THERMAL OXIDATION OF HEAVILY DOPED SILICON [J].
DEAL, BE ;
SKLAR, M .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (04) :430-+
[6]   DOPANT DEPENDENCE OF THE OXIDATION RATE OF ION-IMPLANTED SILICON [J].
GOTZLICH, JF ;
HABERGER, K ;
RYSSEL, H ;
KRANZ, H ;
TRAUMULLER, E .
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1980, 47 (1-4) :203-209
[7]   THERMAL-OXIDATION OF HEAVILY PHOSPHORUS-DOPED SILICON [J].
HO, CP ;
PLUMMER, JD ;
MEINDL, JD ;
DEAL, BE .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (04) :665-671
[8]   SILICON OXIDATION STUDIES - OXIDATION OF HEAVILY B-DOPED AND P-DOPED SINGLE-CRYSTAL SILICON [J].
IRENE, EA ;
DONG, DW .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (07) :1146-1151
[9]   OXIDATION OF SILICON CARBIDE [J].
JORGENSEN, PJ ;
WADSWORTH, ME ;
CUTLER, IB .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1959, 42 (12) :613-616
[10]   EFFECTS OF ANNEALING ON PROFILES OF ALUMINUM IMPLANTED IN SILICON-CARBIDE [J].
LUCKE, W ;
COMAS, J ;
HUBLER, G ;
DUNNING, K .
JOURNAL OF APPLIED PHYSICS, 1975, 46 (03) :994-997
12