BAND ALIGNMENT AT CDS/CUINS2 HETEROJUNCTION

被引：62

作者：

HASHIMOTO, Y

TAKEUCHI, K

ITO, K

机构：

[1] Department of Electrical and Electronic Engineering, Faculty of Engineering, Shinshu University, Nagano 380

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 07期

关键词：

D O I：

10.1063/1.114965

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Band offsets at CdS/CulnS(2) heterojunctions are studied by x-ray photoemission spectroscopy. At the CdS/cyanide-treated CulnS(2) junction, the conduction band offset is as small as -0.05 +/- 0.15 eV, while the valence band offset is 1.18 +/- 0.10 eV. The CdS/Cu-rich CulnS(2) heterojunction without the treatment, however, possesses a conduction band offset of similar to -0.7 eV. This result suggests that the cyanide treatment improves the interface to give rise to the alignment of the conduction band minima, which is suitable to the solar cell applications. (C) 1995 American Institute of Physics.

引用

页码：980 / 982

页数：3

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