OXIDATION OF GAAS IN AN OXYGEN MULTIPOLE PLASMA

被引：33
作者：
GOURRIER, S [1 ]
MIRCEA, A [1 ]
BACAL, M [1 ]
机构：
[1] ECOLE POLYTECH, F-91128 PALAISEAU, FRANCE
来源：
THIN SOLID FILMS | 1980年 / 65卷 / 03期
关键词：
D O I：
10.1016/0040-6090(80)90242-4
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：315 / 330
页数：16
相关论文
共 35 条
[1]   OPTICAL-PROPERTIES OF ANODICALLY GROWN NATIVE OXIDES ON SOME GA-V COMPOUNDS FROM 1.5 TO 6.0 EV [J].
ASPNES, DE ;
SCHWARTZ, B ;
STUDNA, AA ;
DERICK, L ;
KOSZI, LA .
JOURNAL OF APPLIED PHYSICS, 1977, 48 (08) :3510-3513
[2]   ANODIC OXIDE ON GAAS - QUANTITATIVE CHEMICAL DEPTH PROFILES OBTAINED USING AUGER-SPECTROSCOPY AND NEUTRON-ACTIVATION ANALYSIS [J].
CHANG, CC ;
SCHWARTZ, B ;
MURARKA, SP .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (06) :922-926
[3]   PLASMA-GROWN OXIDE ON GAAS - SEMI-QUANTITATIVE CHEMICAL DEPTH PROFILES OBTAINED USING AUGER-SPECTROSCOPY AND NEUTRON-ACTIVATION ANALYSIS [J].
CHANG, CC ;
CHANG, RPH ;
MURARKA, SP .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (03) :481-487
[4]   PLASMA OXIDATION OF GAAS [J].
CHANG, RPH ;
SINHA, AK .
APPLIED PHYSICS LETTERS, 1976, 29 (01) :56-58
[5]   PLASMA OXIDATION OF ALUMINUM FILM ON GAAS - STUDY BY AUGER-SPECTROSCOPY AND TRANSMISSION ELECTRON-MICROSCOPY [J].
CHANG, RPH ;
CHANG, CC ;
SHENG, TT .
APPLIED PHYSICS LETTERS, 1977, 30 (12) :657-659
[6]   MULTIPURPOSE PLASMA REACTOR FOR MATERIALS RESEARCH AND PROCESSING [J].
CHANG, RPH .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (01) :278-280
[7]   NEW METHOD OF FABRICATING GALLIUM-ARSENIDE MOS DEVICES [J].
CHANG, RPH ;
COLEMAN, JJ .
APPLIED PHYSICS LETTERS, 1978, 32 (05) :332-333
[8]   EFFECT OF INTERFACE ARSENIC DOMAINS ON ELECTRICAL-PROPERTIES OF GAAS MOS STRUCTURES [J].
CHANG, RPH ;
SHENG, TT ;
CHANG, CC ;
COLEMAN, JJ .
APPLIED PHYSICS LETTERS, 1978, 33 (04) :341-342
[9]   DC PLASMA ANODIZATION OF GAAS [J].
CHESLER, LA ;
ROBINSON, GY .
APPLIED PHYSICS LETTERS, 1978, 32 (01) :60-62
[10]   PLASMA ANODIZATION OF GAAS IN A DC DISCHARGE [J].
CHESLER, LA ;
ROBINSON, GY .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04) :1525-1529
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