PHOTOREFLECTANCE STUDY OF SURFACE PHOTOVOLTAGE EFFECTS AT (100)GAAS SURFACES INTERFACES

被引：89
作者：
YIN, X
CHEN, HM
POLLAK, FH
CHAN, Y
MONTANO, PA
KIRCHNER, PD
PETTIT, GD
WOODALL, JM
机构：
[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
[2] CUNY GRAD SCH & UNIV CTR,NEW YORK,NY 10036
来源：
APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 03期
关键词：
D O I：
10.1063/1.104682
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report a photoreflectance study of surface photovoltage (V(S)) effects on the determination of Fermi level pinning (V(F)) on (100) n-GaAs in air and with W-metal coverage (in situ) as a function of temperature (77 K < T < 450 K) and light intensity (I). The dependence of V(S) on T and I can be explained by a modification the theory of M. Hecht [Phys. Rev. B 41, 7918 (1990)] yielding a value of V(F) = 0.73 +/- 0.02 V. The effect of metal coverage is to reduce the influence of V(S).
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页码：260 / 262
页数：3
相关论文
共 24 条
  • [11] CONTROL OF FERMI LEVEL PINNING AND RECOMBINATION PROCESSES AT GAAS-SURFACES BY CHEMICAL AND PHOTOCHEMICAL TREATMENTS
    HASEGAWA, H
    ISHII, H
    SAWADA, T
    SAITOH, T
    KONISHI, S
    LIU, YA
    OHNO, H
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (04): : 1184 - 1192
  • [12] ROLE OF PHOTOCURRENT IN LOW-TEMPERATURE PHOTOEMISSION-STUDIES OF SCHOTTKY-BARRIER FORMATION
    HECHT, MH
    [J]. PHYSICAL REVIEW B, 1990, 41 (11): : 7918 - 7921
  • [13] DETERMINATION OF BAND BENDING AT THE SI(113) SURFACE FROM PHOTOVOLTAGE-INDUCED CORE-LEVEL SHIFTS
    JACOBI, K
    MYLER, U
    ALTHAINZ, P
    [J]. PHYSICAL REVIEW B, 1990, 41 (15): : 10721 - 10726
  • [14] Kwok K., 1981, PHYS SEMICONDUCTOR D, P790
  • [15] Rhoderick E H, 1980, METAL SEMICONDUCTOR
  • [16] PHOTOREFLECTANCE LINE SHAPE AT FUNDAMENTAL EDGE IN ULTRAPURE GAAS
    SHAY, JL
    [J]. PHYSICAL REVIEW B, 1970, 2 (04): : 803 - &
  • [17] NEW NORMALIZATION PROCEDURE FOR MODULATION SPECTROSCOPY
    SHEN, H
    PARAYANTHAL, P
    LIU, YF
    POLLAK, FH
    [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1987, 58 (08) : 1429 - 1432
  • [18] PHOTOREFLECTANCE STUDY OF FERMI LEVEL CHANGES IN PHOTOWASHED GAAS
    SHEN, H
    POLLAK, FH
    WOODALL, JM
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (03): : 413 - 415
  • [19] PHOTOREFLECTANCE STUDY OF SURFACE FERMI LEVEL IN GAAS AND GAALAS
    SHEN, H
    DUTTA, M
    FOTIADIS, L
    NEWMAN, PG
    MOERKIRK, RP
    CHANG, WH
    SACKS, RN
    [J]. APPLIED PHYSICS LETTERS, 1990, 57 (20) : 2118 - 2120
  • [20] Shen H., 1987, Proceedings of the SPIE - The International Society for Optical Engineering, V794, P192, DOI 10.1117/12.940913
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