PHOTOREFLECTANCE STUDY OF SURFACE PHOTOVOLTAGE EFFECTS AT (100)GAAS SURFACES INTERFACES

被引：89
作者：
YIN, X
CHEN, HM
POLLAK, FH
CHAN, Y
MONTANO, PA
KIRCHNER, PD
PETTIT, GD
WOODALL, JM
机构：
[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
[2] CUNY GRAD SCH & UNIV CTR,NEW YORK,NY 10036
来源：
APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 03期
关键词：
D O I：
10.1063/1.104682
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report a photoreflectance study of surface photovoltage (V(S)) effects on the determination of Fermi level pinning (V(F)) on (100) n-GaAs in air and with W-metal coverage (in situ) as a function of temperature (77 K < T < 450 K) and light intensity (I). The dependence of V(S) on T and I can be explained by a modification the theory of M. Hecht [Phys. Rev. B 41, 7918 (1990)] yielding a value of V(F) = 0.73 +/- 0.02 V. The effect of metal coverage is to reduce the influence of V(S).
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页码：260 / 262
页数：3
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