T-SHAPED SCHOTTKY-BARRIER GATE GAAS FET

被引：3
作者：
ASAI, K [1 ]
SUGETA, T [1 ]
IDA, M [1 ]
FUJIMOTO, M [1 ]
机构：
[1] NIPPON TELEGRAPH & TEL PUBL CORP,DIV INTEGRATED ELECTR DEV,ELECT COMMUN LABS,TOKYO 180,JAPAN
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1977年 / 42卷 / 01期
关键词：
D O I：
10.1002/pssa.2210420150
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：K7 / &
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