T-SHAPED SCHOTTKY-BARRIER GATE GAAS FET

被引：3

作者：

ASAI, K ^{[1
]}

SUGETA, T ^{[1
]}

IDA, M ^{[1
]}

FUJIMOTO, M ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP,DIV INTEGRATED ELECTR DEV,ELECT COMMUN LABS,TOKYO 180,JAPAN

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1977年 / 42卷 / 01期

关键词：

D O I：

10.1002/pssa.2210420150

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：K7 / &

共 50 条

[1] SCHOTTKY-BARRIER COUPLED SCHOTTKY-BARRIER GATE GAAS-FET LOGIC
HASHIZUME, N
YAMADA, H
KOJIMA, T
MATSUMOTO, K
INSTITUTE OF PHYSICS CONFERENCE SERIES, 1982, (63): : 557 - 562
[2] SCHOTTKY-BARRIER COUPLED SCHOTTKY-BARRIER GATE GAAS-FET LOGIC
HASHIZUME, N
YAMADA, H
TOMIZAWA, K
ELECTRONICS LETTERS, 1981, 17 (01) : 51 - 52
[3] GAAS SCHOTTKY-BARRIER GATE FET FABRICATION TECHNIQUE
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IDA, M
SATO, Y
REVIEW OF THE ELECTRICAL COMMUNICATIONS LABORATORIES, 1975, 23 (11-1): : 1175 - 1181
[4] SPEED-POWER PROPERTY OF GAAS SCHOTTKY-BARRIER COUPLED SCHOTTKY-BARRIER GATE FET LOGIC
TOMIZAWA, K
HASHIZUME, N
MATSUMOTO, K
SUZUKI, F
ELECTRONICS LETTERS, 1981, 17 (21) : 821 - 822
[5] HIGH-EFFICIENCY GAAS SCHOTTKY-BARRIER GATE FET OSCILLATOR
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ELECTRONICS LETTERS, 1980, 16 (13) : 490 - 492
[6] STUDIES OF ALUMINUM SCHOTTKY-BARRIER GATE ANNEALING ON GAAS FET STRUCTURES
SLEGER, K
CHRISTOU, A
SOLID-STATE ELECTRONICS, 1978, 21 (04) : 677 - 684
[7] GAAS SCHOTTKY-BARRIER GATE CCD
DEYHIMY, I
HARRIS, JS
EDWALL, DD
EDEN, RC
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (11) : 1356 - 1356
[8] TRANSMISSION-TYPE INJECTION LOCKING OF GAAS SCHOTTKY-BARRIER FET OSCILLATORS
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IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1979, 27 (05) : 386 - 391
[9] MICROWAVE GAAS SCHOTTKY GATE FET
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ELECTRONICS & COMMUNICATIONS IN JAPAN, 1973, 56 (07): : 90 - 96
[10] GASE SCHOTTKY BARRIER GATE FET
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