VERIFICATION OF ON-WAFER NOISE PARAMETER MEASUREMENTS

被引：12
|
作者：
BOUDIAF, A [1 ]
DUBONCHEVALLIER, C [1 ]
PASQUET, D [1 ]
机构：
[1] FRANCE TELECOM,CNET,BAGNEUX LAB,F-92220 BAGNEUX,FRANCE
来源：
IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT | 1995年 / 44卷 / 02期
关键词：
D O I：
10.1109/19.377845
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Using a thin film technology, we have designed and fabricated a new passive device for noise parameter measurement test instrumentation verification. the main feature specifying this de,ice is the same order of magnitude for input-output reflection coefficients and for noise parameters, as for low-noise field effect transistors. This new device is useful as a verification artifact, suited for on-wafer measurements due to its small size and wide operation bandwidth.
引用
收藏
页码：332 / 335
页数：4
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