VERIFICATION OF ON-WAFER NOISE PARAMETER MEASUREMENTS

被引：12

作者：

BOUDIAF, A ^{[1
]}

DUBONCHEVALLIER, C ^{[1
]}

PASQUET, D ^{[1
]}

机构：

[1] FRANCE TELECOM,CNET,BAGNEUX LAB,F-92220 BAGNEUX,FRANCE

来源：

IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT | 1995年 / 44卷 / 02期

关键词：

D O I：

10.1109/19.377845

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Using a thin film technology, we have designed and fabricated a new passive device for noise parameter measurement test instrumentation verification. the main feature specifying this de,ice is the same order of magnitude for input-output reflection coefficients and for noise parameters, as for low-noise field effect transistors. This new device is useful as a verification artifact, suited for on-wafer measurements due to its small size and wide operation bandwidth.

引用

页码：332 / 335

页数：4

共 7 条

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[2]

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[4] EVALUATION OF NOISE PARAMETER EXTRACTION METHODS [J].

ESCOTTE, L ;

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[5]

ESCOTTE L, 1991, ELECTRON LETT, P8833

[6]

FRASER A, 1988, MICROWAVE J NOV

[7]

MOREAU M, STATISTIQUE APPLIQUE

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