ELECTROREFLECTANCE POLARIZATION STUDY OF VALENCE-BAND STATES IN ORDERED GA0.5IN0.5P

被引：26

作者：

KANATA, T ^{[1
]}

NISHIMOTO, M ^{[1
]}

NAKAYAMA, H ^{[1
]}

NISHINO, T ^{[1
]}

机构：

[1] KOBE UNIV,FAC ENGN,DEPT ELECT & ELECTR,KOBE 657,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 04期

关键词：

D O I：

10.1063/1.109989

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Anisotropic optical transitions in an ordered Ga0.5In0.5P alloy semiconductor have been studied by electroreflectance (ER) polarization spectroscopy. The atomic ordering of column-III sublattices causes a splitting of the valence-band maximum into two doubly degenerated levels at k=0. The ER spectra reveal signals originated from the GAMMA6c-GAMMA4v, GAMMA5v and GAMMA6c-GAMMA6v transitions caused by the ordering. The [110) and [110BAR] ER signals due to the GAMMA6c-GAMMA6v transition show strong anisotropic characters of their intensity and line shape. On the other hand, the signal due to the GAMMA6c-GAMMA4v, GAMMA5v transition changes only in the intensity by the polarization direction. The ER intensities measured at various polarization angles follow the theoretically derived trends based on the selection rule for electronic-dipole transitions in the ordered crystal.

引用

页码：512 / 514

页数：3

共 14 条

[1]

Aspnes D. E., 1980, Handbook on semiconductors, vol.II. Optical properties of solids, P109

[2] CHEMICAL ORDERING IN GAXIN1-XP SEMICONDUCTOR ALLOY GROWN BY METALORGANIC VAPOR-PHASE EPITAXY [J].