INVERTED SURFACE EFFECT OF P-TYPE HGCDTE

被引：23

作者：

CHEN, MC

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 22期

关键词：

D O I：

10.1063/1.98486

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1836 / 1838

页数：3

共 15 条

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[7]

MANY A, 1971, SEMICONDUCTOR SURFAC, pCH4

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JOURNAL OF APPLIED PHYSICS, 1985, 58 (01) :366-373

[9] THEORY OF AN EXPERIMENT FOR MEASURING THE MOBILITY AND DENSITY OF CARRIERS IN THE SPACE-CHARGE REGION OF A SEMICONDUCTOR SURFACE [J].

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