EFFECTS OF GROWN-IN AND PROCESS INDUCED DEFECTS ON NUCLEATION OF STACKING FAULTS IN SILICON EPITAXIAL LAYERS

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作者：
POMERANTZ, D
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JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1970年 / 117卷 / 03期
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O646 [电化学、电解、磁化学];
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081704 ;
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页码：C96 / +
页数：1
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