NOVEL REACTOR FOR HIGH VOLUME LOW-COST SILICON EPITAXY

被引：34
|
作者：
BAN, VS
机构：
来源：
JOURNAL OF CRYSTAL GROWTH | 1978年 / 45卷 / 01期
关键词：
D O I：
10.1016/0022-0248(78)90420-7
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：97 / 107
页数：11
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