ELECTRICAL-CONDUCTIVITY AND THERMOELECTRIC-POWER OF SUBSTITUTIONALLY DOPED AMORPHOUS SILICON

被引：12
作者：
FRIEDMAN, L [1 ]
机构：
[1] UNIV ST ANDREWS,DEPT THEORET PHYS,ST ANDREWS KY16 9ST,FIFE,SCOTLAND
来源：
PHILOSOPHICAL MAGAZINE | 1977年 / 36卷 / 03期
关键词：
D O I：
10.1080/14786437708239739
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：553 / 564
页数：12
相关论文
共 13 条
[1]   NATURE OF ELECTRONIC STATES OF DISORDERED SYSTEM .1. LOCALIZED STATES [J].
ABRAM, RA ;
EDWARDS, SF .
JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1972, 5 (11) :1183-+
[2]  
BEYER W, 1977, COMMUN PHYS, V2, P121
[3]  
Friedman L., 1971, J NONCRYST SOLIDS, V6, P329
[4]   GENERAL EXPRESSION FOR THERMOELECTRIC POWER [J].
FRITZSCHE, H .
SOLID STATE COMMUNICATIONS, 1971, 9 (21) :1813-+
[5]  
Hindley N. K., 1970, Journal of Non-Crystalline Solids, V5, P17, DOI 10.1016/0022-3093(70)90193-6
[6]   THERMOELECTRIC-POWER IN PHOSPHORUS DOPED AMORPHOUS SILICON [J].
JONES, DI ;
COMBER, PGL ;
SPEAR, WE .
PHILOSOPHICAL MAGAZINE, 1977, 36 (03) :541-551
[7]  
Le Comber P. G., 1972, Journal of Non-Crystalline Solids, V11, P219, DOI 10.1016/0022-3093(72)90004-X
[8]   HALL-EFFECT AND IMPURITY CONDUCTION IN SUBSTITUTIONALLY DOPED AMORPHOUS SILICON [J].
LECOMBER, PG ;
JONES, DI ;
SPEAR, WE .
PHILOSOPHICAL MAGAZINE, 1977, 35 (05) :1173-1187
[9]   INVESTIGATION OF DENSITY OF LOCALIZED STATES IN A-SI USING FIELD-EFFECT TECHNIQUE [J].
MADAN, A ;
LECOMBER, PG ;
SPEAR, WE .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1976, 20 (02) :239-257
[10]   ELECTRONS IN DISORDERED STRUCTURES [J].
MOTT, NF .
ADVANCES IN PHYSICS, 1967, 16 (61) :49-+
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