REVERSIBLE ELECTRICAL SWITCHING PHENOMENA IN DISORDERED STRUCTURES

被引：2747

作者：

OVSHINSKY, SR

机构：

[1] Energy Conversion Devices, Inc., Troy, MI

来源：

PHYSICAL REVIEW LETTERS | 1968年 / 21卷 / 20期

关键词：

D O I：

10.1103/PhysRevLett.21.1450

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A rapid and reversible transition between a highly resistive and conductive state effected by an electric field, which we have observed in various types of disordered semiconducting material, is described in detail. The switching parameters and chemical composition of a typical material are presented, and microscopic mechanisms for the conduction phenomena are suggested. © 1968 The American Physical Society.

引用

页码：1450 / +

页数：1

共 11 条

[1] VORPROZESSE DES WARMEDURCHSCHLAGES .2. ZUR THEORIE DER INHOMOGENEN STROMVERTEILUNG BEI HOHEN ELEKTRISCHEN LEISTUNGEN [J].

BOER, KW ;

JAHNE, E ;

NEBAUER, E .

PHYSICA STATUS SOLIDI, 1961, 1 (03) :231-242

[2]

COHEN MH, TO BE PUBLISHED

[3] ELECTRIC FIELD EFFECTS IN TRAPPING PROCESSES [J].

DUSSEL, GA ;

BUBE, RH .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (07) :2797-&

[4]

FRITZSCHE H, TO BE PUBLISHED

[5]

FRITZSCHE H, PRIVATE COMMUNICATIO

[6] ELECTRONS IN DISORDERED STRUCTURES [J].

MOTT, NF .

ADVANCES IN PHYSICS, 1967, 16 (61) :49-+

[7]

OVSHINSKY SR, Patent No. 3271591

[8]

OVSHINSKY SR, TO BE PUBLISHED

[9]

OVSHINSKY SR, 1968, 1968 P EL COMP C WAS, P313

[10]

OVSHINSKY SR, 1967, 4 S VITR CHALC SEM

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