IDENTIFICATION OF INDIVIDUAL BISTABLE DEFECTS IN AVALANCHE PHOTODIODES

被引：6

作者：

BUCHINGER, F ^{[1
]}

KYLE, A ^{[1
]}

LEE, JKP ^{[1
]}

WEBB, C ^{[1
]}

DAUTET, H ^{[1
]}

机构：

[1] EG&G CANADA LTD,DIV OPTOELECTR,VAUDREUIL,PQ J7V 8P7,CANADA

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 18期

关键词：

D O I：

10.1063/1.113985

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2367 / 2369

页数：3

共 11 条

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[9]

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[10] METASTABLE DEFECTS IN SILICON - HINTS FOR DX AND EL2 [J].

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