MODELING OF CURRENT-VOLTAGE CHARACTERISTICS FOR STRAINED AND LATTICE-MATCHED HEMTS ON INP SUBSTRATE USING A VARIATIONAL CHARGE CONTROL MODEL

被引：12
作者：
GUAN, L
CHRISTOU, A
HALKIAS, G
BARBE, DF
机构：
[1] CALCE Electronic Packaging Research Center, University of Maryland, MD 20742, College Park
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1995年 / 42卷 / 04期
关键词：
D O I：
10.1109/16.372062
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A model for the calculation of the current-voltage characteristics of strained In0.52Al0.48As/InxGa1-x on InP substrate High Electron Mobility Transistors (HEMT's), based on a variational charge control model, is presented. A polynomial fit of the two-dimensional electron gas (2DEG) density is used for the calculation of the current-voltage characteristics. The effect of strain is introduced into the 2DEG density versus gate voltage relation. Very good agreement between the calculated and measured I-V characteristics was obtained. In addition, our results show that, for an Indium mole fraction of the InxGa1-xAs channel in the range 0.53-0.60, increasing the Indium mole fraction lowers the threshold voltage and hence increases the drain current at the same gate bias.
引用
收藏
页码：612 / 617
页数：6
相关论文
共 7 条
[1]  
CHANG CS, 1987, IEEE T ELECTRON DEV, V34, P1456, DOI 10.1109/T-ED.1987.23106
[2]   SIMPLE 2-DIMENSIONAL MODEL FOR IGFET OPERATION IN SATURATION REGION [J].
ELMANSY, YA ;
BOOTHROYD, AR .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (03) :254-262
[3]   EFFICIENT CHARGE CONTROL MODEL FOR PSEUDOMORPHIC AND STRAINED HIGH ELECTRON-MOBILITY TRANSISTORS ON GAAS AND INP SUBSTRATES [J].
HALKIAS, G ;
VEGIRI, A ;
PANANAKAKIS, G ;
CHRISTOU, A .
SOLID-STATE ELECTRONICS, 1992, 35 (04) :459-465
[4]   NEW CONTINUOUS HETEROSTRUCTURE FIELD-EFFECT-TRANSISTOR MODEL AND UNIFIED PARAMETER EXTRACTION TECHNIQUE [J].
MOON, BJ ;
BYUN, YH ;
LEE, K ;
SHUR, M .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1990, 37 (04) :908-919
[5]   DESIGN AND EXPERIMENTAL CHARACTERISTICS OF STRAINED IN0.52AL0.48AS/INXGA1-XAS (X-GREATER-THAN-0.53) HEMTS [J].
NG, GI ;
PAVLIDIS, D ;
JAFFE, M ;
SINGH, J ;
CHAU, HF .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (10) :2249-2259
[6]   THE EFFECT OF HIGH FIELDS ON MOS DEVICE AND CIRCUIT PERFORMANCE [J].
SODINI, CG ;
KO, PK ;
MOLL, JL .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (10) :1386-1393
[7]   ELECTRON-ENERGY LEVELS IN GAAS-GA1-XALXAS HETEROJUNCTIONS [J].
STERN, F ;
DASSARMA, S .
PHYSICAL REVIEW B, 1984, 30 (02) :840-848
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