CHEMICAL-REACTION AT THE ZNSE/GAAS INTERFACE DETECTED BY RAMAN-SPECTROSCOPY

被引：61

作者：

KROST, A ^{[1
]}

RICHTER, W ^{[1
]}

ZAHN, DRT ^{[1
]}

HINGERL, K ^{[1
]}

SITTER, H ^{[1
]}

机构：

[1] UNIV LINZ,INST EXPTL PHYS,A-4040 LINZ,AUSTRIA

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 19期

关键词：

D O I：

10.1063/1.104149

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

When ZnSe is deposited at temperatures commonly used for epitaxy onto GaAs, the possibility arises that selenium or zinc reacts with the substrate and thin interfacial layers consisting of a gallium selenide or a zinc arsenide are formed. In particular, Ga2Se3, which is thermodynamically the most stable, has been suggested as a likely candidate. In this study we present evidence for the formation of Ga2Se3 using Raman spectroscopy as a fingerprint technique. Ga2Se3 layers were grown on GaAs and the Raman spectra thereof were compared with those of ZnSe/GaAs heterostructures.

引用

页码：1981 / 1982

页数：2

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