TEMPERATURE-DEPENDENCE OF POSITRON LIFETIME IN GAAS CRYSTALS WITH DEFECTS

被引：6
作者：
BHARATHI, A
GOPINATHAN, KP
SUNDAR, CS
VISWANATHAN, B
机构：
[1] Reactor Research Centre, Kalpakkam
来源：
PRAMANA | 1979年 / 13卷 / 06期
关键词：
defects; diffusion; gallium arsenide; lifetime; low temperature; Positron annihilation; trapping model;
D O I：
10.1007/BF02846295
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Positron lifetime has been measured as a function of temperature in Sidoped GaAs single crystals subjected to various heat treatments. Defects produced by these heat treatments trap positrons. In all the GaAs samples containing defects positron lifetime was found to decrease with temperature in the range from 375 K to 16 K. The decrease is explained as due to the decrease in the trapping rate. The trapping rate is mainly controlled by the diffusion of the positron to the trap. The diffusion constant is determined mainly by the scattering from charged Si impurities. © 1979, the Indiana Academy of Sciences. All rights reserved.
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页码：625 / &
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