ULTRALONG MINORITY-CARRIER LIFETIME EPITAXIAL GAAS BY PHOTON RECYCLING

[1] MINORITY-CARRIER LIFETIME IN ALXGA1-XAS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (03): : 822 - 826

[2] MINORITY-CARRIER LIFETIME IN ITO INP HETEROJUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1988, 64 (04) : 1916 - 1921

[3] AHRENKIEL RK, 1988, 8 MEM C NAC FIS SUP, P1

[4] SELF-ABSORPTION EFFECTS ON RADIATIVE LIFETIME IN GAAS-GAALAS DOUBLE HETEROSTRUCTURES [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (02) : 820 - 822

[5] CONCENTRATION-DEPENDENT ABSORPTION AND SPONTANEOUS EMISSION OF HEAVILY DOPED GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (02) : 631 - 643

[6] EFFECTS OF PRELAYERS ON MINORITY-CARRIER LIFETIME IN GAAS/ALGAAS DOUBLE HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1984, 45 (11) : 1227 - 1229

[7] INTERFACIAL RECOMBINATION AT (ALGA)AS-GAAS HETEROJUNCTION STRUCTURES [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (04) : 1538 - 1544

[8] EFFECT OF REABSORBED RADIATION ON MINORITY-CARRIER DIFFUSION LENGTH IN GAAS [J]. APPLIED PHYSICS LETTERS, 1977, 30 (04) : 207 - 210

[9] SELF-CONSISTENT TREATMENT OF PHOTON RECYCLING IN OPTICAL DETERMINATION OF DIFFUSION LENGTH AND LIFETIME IN GAAS-ALXGA1-XAS HETEROSTRUCTURES [J]. JOURNAL OF LUMINESCENCE, 1979, 18-9 (JAN) : 910 - 912

[10] EFFECT OF PHOTON RECYCLING ON DIFFUSION LENGTH AND INTERNAL QUANTUM EFFICIENCY IN ALXGA1-XAS-GAAS HETEROSTRUCTURES [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (03) : 465 - 477

[1] MINORITY-CARRIER LIFETIME IN ALXGA1-XAS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (03): : 822 - 826

[2] MINORITY-CARRIER LIFETIME IN ITO INP HETEROJUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1988, 64 (04) : 1916 - 1921

[3] AHRENKIEL RK, 1988, 8 MEM C NAC FIS SUP, P1

[4] SELF-ABSORPTION EFFECTS ON RADIATIVE LIFETIME IN GAAS-GAALAS DOUBLE HETEROSTRUCTURES [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (02) : 820 - 822

[5] CONCENTRATION-DEPENDENT ABSORPTION AND SPONTANEOUS EMISSION OF HEAVILY DOPED GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (02) : 631 - 643

[6] EFFECTS OF PRELAYERS ON MINORITY-CARRIER LIFETIME IN GAAS/ALGAAS DOUBLE HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1984, 45 (11) : 1227 - 1229

[7] INTERFACIAL RECOMBINATION AT (ALGA)AS-GAAS HETEROJUNCTION STRUCTURES [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (04) : 1538 - 1544

[8] EFFECT OF REABSORBED RADIATION ON MINORITY-CARRIER DIFFUSION LENGTH IN GAAS [J]. APPLIED PHYSICS LETTERS, 1977, 30 (04) : 207 - 210

[9] SELF-CONSISTENT TREATMENT OF PHOTON RECYCLING IN OPTICAL DETERMINATION OF DIFFUSION LENGTH AND LIFETIME IN GAAS-ALXGA1-XAS HETEROSTRUCTURES [J]. JOURNAL OF LUMINESCENCE, 1979, 18-9 (JAN) : 910 - 912

[10] EFFECT OF PHOTON RECYCLING ON DIFFUSION LENGTH AND INTERNAL QUANTUM EFFICIENCY IN ALXGA1-XAS-GAAS HETEROSTRUCTURES [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (03) : 465 - 477