INFLUENCE OF SUBSTITUTION OF O-16 BY O-18 IN A FEW VANADIUM-OXIDES ON THEIR SEMICONDUCTOR-METAL TRANSITION

被引：11

作者：

TERUKOV, EI ^{[1
]}

REICHELT, W ^{[1
]}

WOLF, M ^{[1
]}

HEMSCHIK, H ^{[1
]}

OPPERMANN, H ^{[1
]}

机构：

[1] AKAD WISSENSCH DDR,CENT INST SOLID STATE PHYS & MAT RES,DDR-8051 DRESDEN,GER DEM REP

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1978年 / 48卷 / 02期

关键词：

D O I：

10.1002/pssa.2210480214

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In the vanadium oxides V2O3, V3O5, and VO2 oxygen is partially replaced by the stable isotope O18. The concentration of O18 in the oxides is determined by IR spectroscopy. The resulting increase of the temperature Tc of the semiconductor—metal transition, found by the measurement of the electrical resistance, is discussed on the basis of different models of phase transition. The results can be qualitatively explained by a concept, where the transition is caused by electron—electron interaction, which is strongly modified by electron—phonon coupling. Copyright © 1978 WILEY‐VCH Verlag GmbH & Co. KGaA

引用

页码：377 / 381

页数：5

共 24 条

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