COHERENT HIGH-FREQUENCY OSCILLATIONS IN N-TYPE INSB SUBJECTED TO A MAGNETIC-FIELD NORMAL TO CURRENT

被引：0

作者：

DOBROVOLSKIS, Z

KROTKUS, A

POZHELA, Y

机构：

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1977年 / 11卷 / 09期

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中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：1083 / 1084

页数：2

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[1] MICROWAVE EMISSION AND HIGH-FREQUENCY OSCILLATIONS IN N-TYPE INSB
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[8] INFLUENCE OF A MAGNETIC-FIELD ON HIGH-FREQUENCY RELAXATION-TIME IN N-TYPE POLAR SEMICONDUCTORS
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