DEVELOPMENT OF EFFICIENT, RADIATION-INSENSITIVE GAAS-ZN LEDS

被引：9

作者：

BARNES, CE

机构：

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1977年 / 24卷 / 06期

关键词：

D O I：

10.1109/TNS.1977.4329213

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2309 / 2314

页数：6

共 10 条

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[2] ELECTROLUMINESCENCE IN AMPNOTERIC SILICON-DOPED GAAS DIODES .2. TRANSIENT RESPONSE [J].

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[3] VARIATION OF MINORITY-CARRIER DIFFUSION LENGTH WITH CARRIER CONCENTRATION IN GAAS LIQUID-PHASE EPITAXIAL LAYERS [J].

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[4]

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[5] DOPANT AND ALLOYING EFFECTS IN GAMMA-IRRADIATED GAAS LIGHT EMITTERS [J].

EPSTEIN, AS ;

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POLIMADEI, RA .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1976, 23 (06) :1654-1663

[6] RADIATION-DAMAGE CONSTANTS OF LIGHT-EMITTING DIODES BY A LOW-CURRENT EVALUATION METHOD [J].

HUM, RH ;

BARRY, AL .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1975, 22 (06) :2482-2487

[7] RADIATION-DAMAGE AND HARDENING EFFECTS ON COMPENSATED GAAS LIGHT-EMITTING DIODES [J].

SHARE, S ;

EPSTEIN, AS ;

POLIMADEI, RA .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1973, NS20 (06) :256-260

[8] EFFECT OF GAMMA-IRRADIATION ON OPTICAL ISOLATORS [J].

SODA, KJ ;

BARNES, CE ;

KIEHL, RA .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1975, 22 (06) :2475-2481

[9] COMPARISON OF LIGHT EMITTING DIODES IN A SPACE RADIATION ENVIRONMENT [J].

STANLEY, AG .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1970, NS17 (06) :239-+

[10]

SZE SM, 1969, PHYSICS SEMICONDUCTO, P99

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