TUNNELING THROUGH INDIRECT-GAP SEMICONDUCTOR BARRIERS

被引：102

作者：

MENDEZ, EE

CALLEJA, E

WANG, WI

机构：

来源：

PHYSICAL REVIEW B | 1986年 / 34卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.34.6026

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：6026 / 6029

页数：4

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