INTERPRETATION OF FORWARD BIAS BEHAVIOR OF SCHOTTKY BARRIERS

被引：38
作者：
BENNETT, RJ
机构：
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1987年 / 34卷 / 04期
关键词：
D O I：
10.1109/T-ED.1987.23020
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：935 / 937
页数：3
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