Interface-induced localisation in AlSb/InAs heterostructures

被引：13
|
作者：
Shaw, MJ
Briddon, PR
Jaros, M
机构：
[1] Department of Physics, University of Newcastle Upon Tyne, Newcastle Upon Tyne
来源：
PHYSICAL REVIEW B | 1995年 / 52卷 / 23期
关键词：
D O I：
10.1103/PhysRevB.52.16341
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The existence of localized states at perfect InSb-like interfaces in AlSb/InAs superlattices is predicted from ab initio pseudopotential calculations. Localized states are predicted in both the valence and conduction bands, the former being identifiable with the interface states proposed by Kroemer, Nguyen, and Brar [J. Vac. Sci. Technol. 10, 1769 (1990)]. The existence of these interface localized states is invoked to explain the reported experimental dependence of the band gap upon interface types in such superlattices.
引用
收藏
页码：16341 / 16344
页数：4
相关论文
共 50 条
  • [41] Simulations of resonant tunnelling through InAs/AlSb heterostructures for ULTRARAM™ memory
    Lane, Dominic
    Hayne, Manus
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2021, 54 (35)
  • [42] Interface-induced sign reversal of the anomalous Hall effect in magnetic topological insulator heterostructures
    Wang, Fei
    Wang, Xuepeng
    Zhao, Yi-Fan
    Xiao, Di
    Zhou, Ling-Jie
    Liu, Wei
    Zhang, Zhidong
    Zhao, Weiwei
    Chan, Moses H. W.
    Samarth, Nitin
    Liu, Chaoxing
    Zhang, Haijun
    Chang, Cui-Zu
    NATURE COMMUNICATIONS, 2021, 12 (01)
  • [43] Interface-induced sign reversal of the anomalous Hall effect in magnetic topological insulator heterostructures
    Fei Wang
    Xuepeng Wang
    Yi-Fan Zhao
    Di Xiao
    Ling-Jie Zhou
    Wei Liu
    Zhidong Zhang
    Weiwei Zhao
    Moses H. W. Chan
    Nitin Samarth
    Chaoxing Liu
    Haijun Zhang
    Cui-Zu Chang
    Nature Communications, 12
  • [44] High mobility metamorphic AlSb/InAs heterostructures grown on InP substrates
    Desplanque, L.
    Vignaud, D.
    Wallart, X.
    JOURNAL OF CRYSTAL GROWTH, 2007, 301 : 194 - 198
  • [45] Highly strained AlAs-type interfaces in InAs/AlSb heterostructures
    Vallet, M.
    Claveau, Y.
    Warot-Fonrose, B.
    Gatel, C.
    Nicolai, J.
    Combe, N.
    Magen, C.
    Teissier, R.
    Baranov, A. N.
    Ponchet, A.
    APPLIED PHYSICS LETTERS, 2016, 108 (21)
  • [46] Spectra of persistent photoconductivity in InAs/AlSb quantum-well heterostructures
    V. Ya. Aleshkin
    V. I. Gavrilenko
    D. M. Gaponova
    A. V. Ikonnikov
    K. V. Marem’yanin
    S. V. Morozov
    Yu. G. Sadofyev
    S. R. Johnson
    Y. -H. Zhang
    Semiconductors, 2005, 39 : 22 - 26
  • [47] Spectra of persistent photoconductivity in InAs/AlSb quantum-well heterostructures
    Aleshkin, VY
    Gavrilenko, VI
    Gaponova, DM
    Ikonnikov, AV
    Marem'yanin, KV
    Morozov, SV
    Sadofyev, YG
    Johnson, SR
    Zhang, YH
    SEMICONDUCTORS, 2005, 39 (01) : 22 - 26
  • [48] Cyclotron resonance in doped and undoped InAs/AlSb heterostructures with quantum wells
    V. Ya. Aleshkin
    V. I. Gavrilenko
    A. V. Ikonnikov
    Yu. G. Sadofyev
    J. P. Bird
    S. R. Johnson
    Y. -H. Zhang
    Semiconductors, 2005, 39 : 62 - 66
  • [49] The 6.1 Å family (InAs, GaSb, AlSb) and its heterostructures:: a selective review
    Kroemer, H
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2004, 20 (3-4): : 196 - 203
  • [50] Interface-induced phenomena in magnetism
    Hellman, Frances
    Hoffmann, Axel
    Tserkovnyak, Yaroslav
    Beach, Geoffrey S. D.
    Fullerton, Eric E.
    Leighton, Chris
    MacDonald, Allan H.
    Ralph, Daniel C.
    Arena, Dario A.
    Durr, Hermann A.
    Fischer, Peter
    Grollier, Julie
    Heremans, Joseph P.
    Jungwirth, Tomas
    Kimel, Alexey V.
    Koopmans, Bert
    Krivorotov, Ilya N.
    May, Steven J.
    Petford-Long, Amanda K.
    Rondinelli, James M.
    Samarth, Nitin
    Schuller, Ivan K.
    Slavin, Andrei N.
    Stiles, Mark D.
    Tchernyshyov, Oleg
    Thiaville, Andre
    Zink, Barry L.
    REVIEWS OF MODERN PHYSICS, 2017, 89 (02)
12345