Interface-induced localisation in AlSb/InAs heterostructures

被引：13

作者：

Shaw, MJ

Briddon, PR

Jaros, M

机构：

[1] Department of Physics, University of Newcastle Upon Tyne, Newcastle Upon Tyne

来源：

PHYSICAL REVIEW B | 1995年 / 52卷 / 23期

关键词：

D O I：

10.1103/PhysRevB.52.16341

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The existence of localized states at perfect InSb-like interfaces in AlSb/InAs superlattices is predicted from ab initio pseudopotential calculations. Localized states are predicted in both the valence and conduction bands, the former being identifiable with the interface states proposed by Kroemer, Nguyen, and Brar [J. Vac. Sci. Technol. 10, 1769 (1990)]. The existence of these interface localized states is invoked to explain the reported experimental dependence of the band gap upon interface types in such superlattices.

引用

页码：16341 / 16344

页数：4

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