SPUTTERED OF ZnO: Al THIN FILMS FOR APPLICATION IN PHOTOVOLTAIC SOLAR CELLS

被引：0
|
作者：
Flickyngerova, Sona [1 ]
Rehakova, Anna [1 ]
Tvarozek, Vladimir [1 ]
Novotny, Ivan [1 ]
机构：
[1] Univ Technol Bratislava, Dep Microelect, Ilkovicova 3, SK-81219 Bratislava, Slovakia
来源：
ADVANCES IN ELECTRICAL AND ELECTRONIC ENGINEERING | 2008年 / 7卷 / 1-2期
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
High transparent and conductive, aluminium - doped zinc oxide thin films (ZnO:Al), were prepared by radio frequency (RF) diode sputtering from ZnO+2 wt. % Al2O3 target on Eutal glass substrates. Surfaces of the samples were treated by various technological steps during preparation. The ion bombardment and the substrate temperature modified their structure, surface morphology, electrical and optical parameters. In this work we present changes between samples prepared at room temperature (RT) and at 200 degrees C, between samples on ion etched substrate and non-modified substrate, and effect of ion etching of the sample surface. We measured transmittance, resistivity and microroughness by AFM on all samples.
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页码：382 / 384
页数：3
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