ELECTRONIC-STRUCTURE STUDIES OF UNDOPED AND N-TYPE DOPED FULLERENE C60

被引：88

作者：

SOHMEN, E ^{[1
]}

FINK, J ^{[1
]}

KRATSCHMER, W ^{[1
]}

机构：

[1] MAX PLANCK INST NUCL PHYS, W-6900 HEIDELBERG 1, GERMANY

来源：

EUROPHYSICS LETTERS | 1992年 / 17卷 / 01期

关键词：

ELECTRONIC DENSITY OF STATES DETERMINATIONS; SUPERCONDUCTING LAYER STRUCTURES AND INTERCALATION COMPOUNDS; OTHER ELECTRON IMPACT PHENOMENA;

D O I：

10.1209/0295-5075/17/1/010

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The electronic structure of undoped and K-doped C60 has been investigated by high-energy electron energy-loss spectroscopy in transmission. Information on the filling and energetic position of pi*-levels as a function of dopant concentration is obtained. From momentum-dependent measurements it is concluded that for undoped and doped C60 the pi-bands are narrow indicating a weak interaction between the C60 molecules.

引用

页码：51 / 55

页数：5

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