NEAR-SURFACE DAMAGE CREATED IN SILICON BY BF2+ IMPLANTATION

被引：0
作者：
LI, XQ
LIN, CL
YANG, GQ
ZHOU, ZY
ZOU, SC
机构：
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1991年 / 55卷 / 1-4期
关键词：
D O I：
暂无
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
The near-surface damage in silicon induced by the bombardment of 147 keV BF2+ has been investigated by 2 MeV He+ Rutherford-backscattering spectrometry. The implantation was carried out at room temperature with the ion doses ranging from approximately 10(13) to approximately 10(16) cm-2. The radiation damage was compared with corresponding B+ and F+ atomic-ion implantation. A damage enhancement at the surface region of the silicon implanted with BF2+ has been observed and it is attributed to the multiple-collision effect between molecular ions and host atoms.
引用
收藏
页码：589 / 592
页数：4
相关论文
共 50 条
[31]   Three-dimensional modeling of low-dose BF2+ implantation into single-crystalline silicon [J].
Murthy, CS ;
Posselt, M ;
Frei, T .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (01) :278-282
[32]   Electrically active defects in BF2+ implanted and germanium preamorphized silicon [J].
Boussaid, F ;
Benzohra, M ;
Olivie, F ;
Alquier, D ;
Martinez, A .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1998, 134 (02) :195-201
[33]   HYDROGEN IN THE NEAR-SURFACE OF CRYSTALLINE SILICON [J].
JAWOROWSKI, AE .
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1989, 112 (1-2) :167-176
[34]   Near-surface stresses in silicon(001) [J].
Delph, T. J. .
SURFACE SCIENCE, 2008, 602 (01) :259-267
[35]   NEAR-SURFACE EFFECTS OF GOLD IN SILICON [J].
MOGROCAMPERO, A ;
LOVE, RP .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (08) :C328-C328
[36]   NEAR-SURFACE EFFECTS OF GOLD IN SILICON [J].
MOGROCAMPERO, A ;
LOVE, RP .
SOLID-STATE ELECTRONICS, 1986, 29 (07) :703-706
[37]   Electrically active defects in BF2+ implanted and germanium preamorphized silicon [J].
Boussaid, Farid ;
Benzohra, Mohammed ;
Olivie, Francois ;
Alquier, Daniel ;
Martinez, Augustin .
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 1998, 134 (02) :195-201
[38]   Formation of ultra-shallow junction by BF2+ implantation and spike annealing [J].
Kubo, T ;
Hori, M ;
Kase, M .
2000 INTERNATIONAL CONFERENCE ON ION IMPLANTATION TECHNOLOGY, PROCEEDINGS, 2000, :195-198
[39]   NEAR-SURFACE DAMAGE AND CONTAMINATION OF SILICON FOLLOWING ELECTRON-CYCLOTRON RESONANCE ETCHING [J].
YAPSIR, AS ;
FORTUNOWILTSHIRE, G ;
GAMBINO, JP ;
KASTL, RH ;
PARKS, CC .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1990, 8 (03) :2939-2944
[40]   Cryogenic BF2+ Implantation near Amorphization Threshold Dose for Halo Junctions in Sub-30 nm Device Technologies [J].
Park, Hugh H. ;
Todorov, Stan ;
Colombeau, Benjamin ;
Rodier, Dennis ;
Decker-Lucke, Kurt .
ELECTROCHEMICAL AND SOLID STATE LETTERS, 2012, 15 (02) :H31-H33
12345