NEAR-SURFACE DAMAGE CREATED IN SILICON BY BF2+ IMPLANTATION

被引：0
|
作者：
LI, XQ
LIN, CL
YANG, GQ
ZHOU, ZY
ZOU, SC
机构：
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1991年 / 55卷 / 1-4期
关键词：
D O I：
暂无
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
The near-surface damage in silicon induced by the bombardment of 147 keV BF2+ has been investigated by 2 MeV He+ Rutherford-backscattering spectrometry. The implantation was carried out at room temperature with the ion doses ranging from approximately 10(13) to approximately 10(16) cm-2. The radiation damage was compared with corresponding B+ and F+ atomic-ion implantation. A damage enhancement at the surface region of the silicon implanted with BF2+ has been observed and it is attributed to the multiple-collision effect between molecular ions and host atoms.
引用
收藏
页码：589 / 592
页数：4
相关论文
共 50 条
  • [21] Annealing properties of defects in BF2+ implanted silicon
    Kitano, T
    Watanabe, M
    Yaoita, A
    Oguro, S
    Uedono, A
    Moriya, T
    Tanigawa, S
    Kawano, T
    Suzuki, R
    Ohdaira, T
    Mikado, T
    MATERIALS MODIFICATION AND SYNTHESIS BY ION BEAM PROCESSING, 1997, 438 : 137 - 142
  • [22] Effects of BF2+ implantation on the oxidation resistance of copper films
    Wu, Zhen-Cheng
    Liu, Yu-Lin
    Chen, Mao-Chieh
    Thin Solid Films, 1999, 346 (01): : 186 - 190
  • [23] Doping characteristics of BF2+ implants in ⟨100⟩ and ⟨111⟩ silicon
    Drobny, VF
    Rubalcava, J
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2001, 48 (08) : 1661 - 1666
  • [24] Activation behavior of BF2+ implants in RTP annealed silicon
    Drobny, VF
    Chang, K
    Robinson, D
    IIT2002: ION IMPLANTATION TECHNOLOGY, PROCEEDINGS, 2003, : 686 - 689
  • [25] Contamination of BF2+ beam and the effects on implantation junction depth
    Li, Jinhua
    Zou, Shichang
    Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 1990, 11 (04): : 294 - 300
  • [26] STUDY OF POINT-DEFECT CLUSTERS PRODUCED BY BF2+ IMPLANTATION IN SILICON SINGLE-CRYSTALS
    LAL, K
    BHAGAVANNARAYANA, G
    VIRDI, GS
    JOURNAL OF APPLIED PHYSICS, 1991, 69 (12) : 8092 - 8095
  • [27] NEAR-SURFACE DEFECTS FORMED DURING RAPID THERMAL ANNEALING OF PREAMORPHIZED AND BF2+-IMPLANTED SILICON
    SANDS, T
    WASHBURN, J
    GRONSKY, R
    MASZARA, W
    SADANA, DK
    ROZGONYI, GA
    APPLIED PHYSICS LETTERS, 1984, 45 (09) : 982 - 984
  • [28] RAPID THERMAL ANNEALING OF BF2+ IMPLANTED, PREAMORPHIZED SILICON
    SEIDEL, TE
    IEEE ELECTRON DEVICE LETTERS, 1983, 4 (10) : 353 - 355
  • [29] OPTIMIZATION OF BF2+ IMPLANTED AND RAPIDLY ANNEALED JUNCTIONS IN SILICON
    WU, IW
    FULKS, RT
    MIKKELSEN, JC
    JOURNAL OF APPLIED PHYSICS, 1986, 60 (07) : 2422 - 2438
  • [30] ELECTRICAL AND STRUCTURAL CHARACTERIZATION OF BF2+ SELF-ANNEALED IMPLANTATION
    GALLONI, R
    RIZZOLI, R
    LARSEN, AN
    SHIRYAEV, SY
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 19-20 : 466 - 469
12345