NEAR-SURFACE DAMAGE CREATED IN SILICON BY BF2+ IMPLANTATION

被引：0
作者：
LI, XQ
LIN, CL
YANG, GQ
ZHOU, ZY
ZOU, SC
机构：
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1991年 / 55卷 / 1-4期
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中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
The near-surface damage in silicon induced by the bombardment of 147 keV BF2+ has been investigated by 2 MeV He+ Rutherford-backscattering spectrometry. The implantation was carried out at room temperature with the ion doses ranging from approximately 10(13) to approximately 10(16) cm-2. The radiation damage was compared with corresponding B+ and F+ atomic-ion implantation. A damage enhancement at the surface region of the silicon implanted with BF2+ has been observed and it is attributed to the multiple-collision effect between molecular ions and host atoms.
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页码：589 / 592
页数：4
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