GAAS INTEGRATED-CIRCUIT DEVELOPMENT FOR GIGABIT-RATE SIGNAL-PROCESSING

被引：0

作者：

UPADHYAYULA, LC

SMITH, R

MATARESE, R

机构：

来源：

RCA REVIEW | 1981年 / 42卷 / 04期

关键词：

Compendex;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

LOGIC DEVICES

引用

页码：522 / 541

页数：20

共 10 条

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[2] GRAPHICAL DESIGN AND ITERATIVE ANALYSIS OF DC PARAMETERS OF GAAS FETS [J].

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[3] MATRIX-METHODS FOR MICROSTRIP 3-DIMENSIONAL PROBLEMS [J].

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[4]

GREILING PT, 1978, 36TH ANN DEV RES C S

[5] DESIGN AND PERFORMANCE OF MICROWAVE AMPLIFIERS WITH GAAS SCHOTTKY-GATE FIELD-EFFECT TRANSISTORS [J].

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TILLMAN, RL .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1974, MT22 (05) :510-517

[6]

LINSTEAD RD, 1972, IEEE T ELECTRON DEV, V19, P41

[7]

Pucel RA, 1975, ADV ELECTRONICS ELEC, V38, P195, DOI DOI 10.1016/S0065-2539(08)61205-6

[8] ELECTROLYTIC ETCHING AND ELECTRON-MOBILITY OF GAAS FOR FETS [J].

RODE, DL ;

SCHWARTZ, B ;

DILORENZO, JV .

SOLID-STATE ELECTRONICS, 1974, 17 (11) :1119-1123

[9]

UPADHYAYULA LC, 1980, RCA REV, V41, P198

[10]

VANTUYL RL, 1976, ISSCC DIG TECH PAPER, P20

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