SEMICONDUCTOR DIODE MASERS IN (INXGA1-X)AS

被引：44

作者：

MELNGAILIS, I

STRAUSS, AJ

REDIKER, RH

机构：

来源：

PROCEEDINGS OF THE IEEE | 1963年 / 51卷 / 08期

关键词：

D O I：

10.1109/PROC.1963.2469

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1154 / &

共 12 条

[1] THERMAL, ELECTRICAL AND OPTICAL PROPERTIES OF (IN,GA)AS ALLOYS [J].

ABRAHAMS, MS ;

BRAUNSTEIN, R ;

ROSI, FD .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 10 (2-3) :204-210

[2] COHERENT LIGHT EMISSION FROM GAAS JUNCTIONS [J].

HALL, RN ;

CARLSON, RO ;

SOLTYS, TJ ;

FENNER, GE ;

KINGSLEY, JD .

PHYSICAL REVIEW LETTERS, 1962, 9 (09) :366-&

[3] PREPARATION OF INDIUM ARSENIDE [J].

HARADA, RH ;

STRAUSS, AJ .

JOURNAL OF APPLIED PHYSICS, 1959, 30 (01) :121-121

[4] COHERENT (VISIBLE) LIGHT EMISSION FROM GA(AS1-XPX) JUNCTIONS [J].

HOLONYAK, N ;

BEVACQUA, SF .

APPLIED PHYSICS LETTERS, 1962, 1 (04) :82-83

[5]

KRAG WE, PRIVATE COMMUNICATIO

[6] MASER ACTION IN INAS DIODES [J].

MELNGAILIS, I .

APPLIED PHYSICS LETTERS, 1963, 2 (09) :176-178

[7] MAGNETICALLY TUNABLE CW-INAS DIODE MASER [J].

MELNGAILIS, I ;

REDIKER, RH .

APPLIED PHYSICS LETTERS, 1963, 2 (11) :202-204

[8] STIMULATED EMISSION OF RADIATION FROM GAAS P-N JUNCTIONS [J].

NATHAN, MI ;

DUMKE, WP ;

BURNS, G ;

DILL, FH ;

LASHER, G .

APPLIED PHYSICS LETTERS, 1962, 1 (03) :62-64

[9] SEMICONDUCTOR MASER OF GAAS [J].

QUIST, TM ;

REDIKER, RH ;

KEYES, RJ ;

KRAG, WE ;

LAX, B ;

MCWHORTER, AL ;

ZEIGLER, HJ .

APPLIED PHYSICS LETTERS, 1962, 1 (04) :91-92

[10]

VANHOOK HJ, 1963, T METALL SOC AIME, V227, P220

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