DOPING OF SILICON BY PULSED ELECTRON-BEAM ANNEALING OF DEPOSITED LAYERS

被引:0
作者
MAENPAA, M
LAU, SS
VONALLMEN, M
GOLECKI, I
NICOLET, MA
MINNUCCI, J
机构
[1] CALTECH,PASADENA,CA 91125
[2] SPIRE CORP,BEDFORD,MA 01730
关键词
D O I
10.1016/0040-6090(80)90462-9
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:293 / 297
页数:5
相关论文
共 50 条
[41]   SILICON-NITRIDE FILMS DEPOSITED WITH AN ELECTRON-BEAM CREATED PLASMA [J].
BISHOP, DC ;
EMERY, KA ;
ROCCA, JJ ;
THOMPSON, LR ;
ZARNANI, H ;
COLLINS, GJ .
APPLIED PHYSICS LETTERS, 1984, 44 (06) :598-600
[42]   SUBLIMATION AND DIFFUSION OF ARSENIC IMPLANTED INTO SILICON AT RAPID ELECTRON-BEAM ANNEALING [J].
GROTZSCHEL, R ;
KAGADEY, VA ;
LEBEDEVA, NI ;
PROSKUROVSKY, DI .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1991, 55 (1-4) :573-575
[43]   SUBTHRESHOLD ENERGY ELECTRON-BEAM ANNEALING OF TIN-IMPLANTED SILICON [J].
OAK, AM ;
VAVILOV, VS ;
CHUKICHEV, MV ;
SPINEL, VS .
RADIATION EFFECTS LETTERS, 1983, 86 (01) :1-5
[44]   Scanning electron beam annealing of sputter-deposited titanium on silicon [J].
Cervera, M ;
ClimentFont, A ;
Garrido, J ;
Martinez, J ;
Perriere, J .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1996, 118 (1-4) :733-738
[45]   PULSED ELECTRON-BEAM ANNEALING ION-IMPLANTED MATERIALS - EQUIPMENT AND RESULTS [J].
LITTLE, RG ;
GREENWALD, AC .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1981, 28 (02) :1751-1753
[46]   THE ANNEALING OF PHOSPHORUS-ION-IMPLANTED CADMIUM TELLURIDE BY A PULSED ELECTRON-BEAM [J].
YANG, CB ;
LUE, JT ;
HWANG, HL ;
PENG, ML .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (11) :2297-2300
[47]   PULSED ELECTRON-BEAM ANNEALING OF SPUTTERED AMORPHOUS SI-H FILMS [J].
TARDY, J ;
BARBIER, D ;
CACHARD, A ;
LAUGIER, A ;
FONTENILLE, J .
MATERIALS RESEARCH BULLETIN, 1981, 16 (03) :347-352
[48]   PULSED ELECTRON-BEAM ANNEALING OF SELENIUM-IMPLANTED GALLIUM-ARSENIDE [J].
INADA, T ;
TOKUNAGA, K ;
TAKA, S .
APPLIED PHYSICS LETTERS, 1979, 35 (07) :546-548
[49]   PULSED ELECTRON-BEAM ANNEALING ION-IMPLANTED MATERIALS - EQUIPMENT AND RESULTS [J].
LITTLE, RG .
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1980, 25 (07) :798-798
[50]   PULSED-ELECTRON-BEAM ANNEALING OF POLYCRYSTALLINE-SILICON FILMS [J].
KAMINS, TI ;
GREENWALD, AC .
APPLIED PHYSICS LETTERS, 1979, 35 (03) :282-285