DOPING OF SILICON BY PULSED ELECTRON-BEAM ANNEALING OF DEPOSITED LAYERS

被引：0
作者：
MAENPAA, M
LAU, SS
VONALLMEN, M
GOLECKI, I
NICOLET, MA
MINNUCCI, J
机构：
[1] CALTECH,PASADENA,CA 91125
[2] SPIRE CORP,BEDFORD,MA 01730
来源：
THIN SOLID FILMS | 1980年 / 67卷 / 02期
关键词：
D O I：
10.1016/0040-6090(80)90462-9
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：293 / 297
页数：5
相关论文
共 50 条
[31]   SCANNED ELECTRON-BEAM ANNEALING OF ARSENIC-IMPLANTED SILICON [J].
SMITH, HJ ;
LIGEON, E ;
BONTEMPS, A .
APPLIED PHYSICS LETTERS, 1980, 37 (11) :1036-1039
[32]   NORMAL-TYPE DOPING OF INP BY IMPLANTATION AND ELECTRON-BEAM ANNEALING [J].
DAVIES, DE ;
LORENZO, JP ;
COMER, JJ ;
RYAN, TG .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (11) :1833-1834
[33]   PULSED LASER AND ELECTRON-BEAM INDUCED DIFFUSION OF ANTIMONY IN SILICON [J].
FOGARASSY, E ;
SIFFERT, P ;
BARBIER, D ;
CHEMISKY, G ;
LAUGIER, A .
JOURNAL DE PHYSIQUE, 1983, 44 (NC-5) :241-245
[34]   Structure and Properties of Boride Layers Deposited by Electron-Beam and Chemicothermal Treatment [J].
I. G. Sizov ;
N. N. Smirnyagina ;
A. P. Semenov .
Metal Science and Heat Treatment, 2001, 43 :460-461
[35]   Structure and properties of boride layers deposited by electron-beam and chemicothermal treatment [J].
Sizov, IG ;
Smirnyagina, NN ;
Semenov, AP .
METAL SCIENCE AND HEAT TREATMENT, 2001, 43 (11-12) :460-461
[36]   THICK SILICON DIOXIDE LAYERS, OBTAINED BY AN ELECTRON-BEAM METHOD [J].
SHAPOCHKIN, BA ;
SAFONOV, VF ;
STEPURO, AV ;
KLOCHKOV, AM .
SOVIET JOURNAL OF OPTICAL TECHNOLOGY, 1982, 49 (11) :724-724
[37]   PULSED ELECTRON BEAM ANNEALING APPARATUS AND ANNEALING OF As-IMPLANTED SILICON. [J].
Itoh, T. ;
Rao, D.X. ;
Tamura, H. ;
Ohkubo, Y. .
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 1981, 2 (03) :234-239
[38]   SEMICONDUCTOR SURFACE DOPING BY ELECTRON-BEAM MELTING OF THIN EVAPORATED LAYERS [J].
MUNITZ, A ;
BURSHTEIN, Z ;
BAMBERGER, M .
MATERIALS RESEARCH BULLETIN, 1985, 20 (07) :803-813
[39]   DOPING OF SI BY TRANSIENT ANNEALING OF DEPOSITED LAYERS [J].
MAENPAA, M ;
LAU, SS ;
VONALLMEN, M ;
GOLECKI, I ;
NICOLET, MA ;
MINNUCCI, J .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (08) :C348-C348
[40]   ELECTRON-BEAM ENHANCED GROWTH OF CVD-DEPOSITED SILICON ON ALUMINA [J].
HEINEMANN, K ;
OSAKA, T .
JOURNAL OF CRYSTAL GROWTH, 1982, 59 (03) :485-498
12345