DOPING OF SILICON BY PULSED ELECTRON-BEAM ANNEALING OF DEPOSITED LAYERS

被引:0
作者
MAENPAA, M
LAU, SS
VONALLMEN, M
GOLECKI, I
NICOLET, MA
MINNUCCI, J
机构
[1] CALTECH,PASADENA,CA 91125
[2] SPIRE CORP,BEDFORD,MA 01730
关键词
D O I
10.1016/0040-6090(80)90462-9
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:293 / 297
页数:5
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