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- [2] PULSED ELECTRON-BEAM ANNEALING OF AS AND B IMPLANTED SILICON JOURNAL DE PHYSIQUE, 1983, 44 (NC-5): : 209 - 214
- [6] PULSED ELECTRON-BEAM ANNEALING OF ARSENIC IMPLANTATION DAMAGE IN SILICON JOURNAL DE PHYSIQUE, 1982, 43 (NC-5): : 411 - 420
- [7] PULSED ELECTRON-BEAM ANNEALING OF ION-IMPLANTED SI LAYERS RADIATION EFFECTS LETTERS, 1979, 43 (01): : 31 - 36
- [9] ANNEALING OF IN IMPLANTED GERMANIUM BY PULSED ELECTRON-BEAM NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 209 (MAY): : 701 - 705
- [10] PULSED ELECTRON-BEAM ANNEALING OF HIGH-DOSE ARSENIC IMPLANTED SILICON APPLIED PHYSICS, 1980, 22 (04): : 385 - 388