EXPERIMENTAL-CONDITION DEPENDENCE OF PHOSPHORUS DIFFUSIVITY IN SILICON

被引:19
作者
GHOSTAGORE, RN
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D O I
10.1103/PhysRevLett.25.856
中图分类号
O4 [物理学];
学科分类号
0702 ;
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页码:856 / +
页数:1
相关论文
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[1]  
GHOSHTAGORE RN, TO BE PUBLISHED
[3]   THE DIFFUSION OF PHOSPHORUS IN SILICON [J].
MACKINTOSH, IM .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (05) :392-401
[4]   DIFFUSION OF PHOSPHORUS INTO SILICON [J].
MAEKAWA, S .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1962, 17 (10) :1592-&
[5]   OXIDATION, DEFECTS AND VACANCY DIFFUSION IN SILICON [J].
SANDERS, IR ;
DOBSON, PS .
PHILOSOPHICAL MAGAZINE, 1969, 20 (167) :881-&