Parametric Yield;
Process Variation;
Runtime Leakage Reduction;
Transistor Sizing;
D O I:
10.1166/jolpe.2010.1058
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
As the fabrication process technology is moving from submicron region to deep submicron or nanometer region, the impact of process parameter variations is becoming more and more dominant and increasing the loss in parametric yield due to variation in leakage power and delay. As a consequence, parametric yield loss has become a serious concern of the fabrication houses. This has opened up a challenge to the designers' community to design circuits that are tolerant to process parameter variations, thereby increasing the parametric yield. In this paper, we have proposed a novel approach by judicious use of sizing along with single-Vt realization to achieve reduction in leakage power comparable to dual-Vt based approaches, but having less sensitivity to process parameter variations. The effect of statistical variation of effective channel length on delay and leakage power have been studied and compared using Monte-Carlo simulation. The simulation results indicate that the proposed approach provides better reduction in delay and leakage variabilities and also provides higher parametric yield compared to existing representative dual-Vt based approaches with comparable reduction in total and leakage power.