GAP STATES, DOPING AND BONDING IN TETRAHEDRAL AMORPHOUS-CARBON

被引：41

作者：

AMARATUNGA, GAJ ^{[1
]}

ROBERTSON, J ^{[1
]}

VEERASAMY, VS ^{[1
]}

MILNE, WI ^{[1
]}

MCKENZIE, DR ^{[1
]}

机构：

[1] UNIV SYDNEY,SCH PHYS,SYDNEY,NSW 2006,AUSTRALIA

来源：

关键词：

AMORPHOUS CARBON; BONDING; ELECTRON PARAMAGNETIC RESONANCE; SEMICONDUCTOR;

D O I：

10.1016/0925-9635(94)05295-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Highly tetrahedral amorphous carbon (ta-C) formed by energetic C ion deposition is shown to have a relatively low density of defect gap states. This allows ta-C to be doped and show photoconductivity, even though unhydrogenated. The spin density is measured as a function of ion energy and is found to decrease with increasing sp(3) bonding from a value of 10(20) cm(-3) to 6 x 10(18) Cm-3. The low defect density of ta-C, despite the presence of 10-40% of sp(2) sites, arises from the ability of sp(2) sites to pair up and form rr bonds, whose states lie outside the gap.

引用

页码：637 / 640

页数：4

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