PREPARATION AND MELTING OF AMORPHOUS-SILICON BY MOLECULAR-DYNAMICS SIMULATIONS

被引：156
作者：
LUEDTKE, WD
LANDMAN, U
机构：
来源：
PHYSICAL REVIEW B | 1988年 / 37卷 / 09期
关键词：
D O I：
10.1103/PhysRevB.37.4656
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
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页码：4656 / 4663
页数：8
相关论文
共 33 条
[1]   PULSED MELTING OF SILICON (111) AND (100) SURFACES SIMULATED BY MOLECULAR-DYNAMICS [J].
ABRAHAM, FF ;
BROUGHTON, JQ .
PHYSICAL REVIEW LETTERS, 1986, 56 (07) :734-737
[2]  
ABRAHAM FF, 1985, SURF SCI, V163, pL752, DOI 10.1016/0039-6028(85)91055-6
[3]  
ADLER D, 1985, TETRAHEDRALLY BONDED
[4]   PHASE-TRANSITIONS IN AMORPHOUS SI PRODUCED BY RAPID HEATING [J].
BAERI, P ;
FOTI, G ;
POATE, JM ;
CULLIS, AG .
PHYSICAL REVIEW LETTERS, 1980, 45 (25) :2036-2039
[5]  
BAGLEY BG, 1979, AIP C P, V50, P97
[6]   INTERATOMIC POTENTIALS FOR SILICON STRUCTURAL ENERGIES [J].
BISWAS, R ;
HAMANN, DR .
PHYSICAL REVIEW LETTERS, 1985, 55 (19) :2001-2004
[7]  
Brodsky MH, 1985, AMORPHOUS SEMICONDUC
[8]  
BROUGHTON J, 1985, MATERIAL RES SOC S P, V63
[9]   PHASE-DIAGRAM OF SILICON BY MOLECULAR-DYNAMICS [J].
BROUGHTON, JQ ;
LI, XP .
PHYSICAL REVIEW B, 1987, 35 (17) :9120-9127
[10]   MOLECULAR-DYNAMICS SIMULATION OF AMORPHOUS-GERMANIUM [J].
DING, KJ ;
ANDERSEN, HC .
PHYSICAL REVIEW B, 1986, 34 (10) :6987-6991
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