THERMAL DONOR FORMATION IN PRE-HEAT-TREATED N-SI-O CRYSTALS

被引：11

作者：

MARKEVICH, VP

MURIN, LI

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1989年 / 111卷 / 02期

关键词：

D O I：

10.1002/pssa.2211110240

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：K149 / K154

页数：6

共 13 条

[1] THE OXYGEN RELATED DONOR EFFECT IN SILICON [J].

BENTON, JL ;

KIMERLING, LC ;

STAVOLA, M .

PHYSICA B & C, 1983, 116 (1-3) :271-275

[2] NEW DONOR FORMATION IN N-TYPE CZOCHRALSKI-GROWN SILICON [J].

FUKUOKA, N .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1985, 24 (11) :1450-1453

[3] THE EFFECT OF PRE-HEAT-TREATMENTS ON THE FORMATION KINETICS OF THERMAL DONORS IN SILICON [J].

GAWORZEWSKI, P ;

HILD, E .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1985, 92 (01) :129-135

[4]

ILIN MA, 1984, 1 ZAV LAB, P24

[5] INITIAL GENERATION KINETICS OF OXYGEN-RELATED THERMAL DONORS AT 430-DEGREES-C IN SILICON [J].

KAMIURA, Y ;

HASHIMOTO, F ;

ENDO, K .

JOURNAL OF APPLIED PHYSICS, 1987, 61 (07) :2478-2485

[6] ELECTRICAL AND OPTICAL CHARACTERIZATION OF THERMAL DONORS IN SILICON [J].

LATUSHKO, YI ;

MAKARENKO, LF ;

MARKEVICH, VP ;

MURIN, LI .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1986, 93 (02) :K181-K184

[7] THERMAL DONORS AND CARBON-OXYGEN DEFECTS IN SILICON [J].

LINDSTROM, JL ;

WEMAN, H ;

OEHRLEIN, GS .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1987, 99 (02) :581-591

[8]

Makarenko L. F., 1985, FIZ TEKH POLUPROV, V19, P1935

[9] KINETICS OF THERMAL DONOR GENERATION IN SILICON [J].

MAO, BY ;

LAGOWSKI, J ;

GATOS, HC .

JOURNAL OF APPLIED PHYSICS, 1984, 56 (10) :2729-2733

[10] SOME NEW FEATURES OF THERMAL DONOR FORMATION IN SILICON AT T-LESS-THAN-800-K [J].

MARKEVICH, VP ;

MAKARENKO, LF ;

MURIN, LI .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1986, 97 (02) :K173-K176

← 1 2 →