MODELING AND SIMULATION OF INSULATED-GATE FIELD-EFFECT TRANSISTOR SWITCHING CIRCUITS

被引：278

作者：

SHICHMAN, H

HODGES, DA

机构：

来源：

关键词：

D O I：

10.1109/JSSC.1968.1049902

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：285 / &

共 9 条

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[7] SANDBERG IW, 1968, BELL SYS TECH J, V47
[8] Traub J.F., 1964, ITERATIVE METHODS SO
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