MODELING AND SIMULATION OF INSULATED-GATE FIELD-EFFECT TRANSISTOR SWITCHING CIRCUITS

被引：278

|

作者：

SHICHMAN, H

HODGES, DA

机构：

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1968年 / SC 3卷 / 03期

关键词：

D O I：

10.1109/JSSC.1968.1049902

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：285 / &

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