MODELING AND SIMULATION OF INSULATED-GATE FIELD-EFFECT TRANSISTOR SWITCHING CIRCUITS

被引：287
作者：
SHICHMAN, H
HODGES, DA
机构：
来源：
IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1968年 / SC 3卷 / 03期
关键词：
D O I：
10.1109/JSSC.1968.1049902
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：285 / &
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