DOPANTS REDISTRIBUTION DURING TITANIUM-DISILICIDE FORMATION BY RAPID THERMAL-PROCESSING

被引：4

作者：

PASA, AA ^{[1
]}

DESOUZA, JP ^{[1
]}

BAUMVOL, IJR ^{[1
]}

FREIRE, FL ^{[1
]}

机构：

[1] PONTIFICIA UNIV CATOL RIO DE JANEIRO,DEPT FIS,BR-22452 RIO DE JANEIRO,RJ,BRAZIL

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 61卷 / 03期

关键词：

D O I：

10.1063/1.338177

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1228 / 1230

页数：3

共 13 条

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[4]

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[5] RAPID ISOTHERMAL ANNEALING OF ION-IMPLANTATION DAMAGE USING A THERMAL-RADIATION SOURCE [J].

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[6] RAPID THERMAL ANNEALING AND TITANIUM SILICIDE FORMATION [J].

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APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1985, 38 (01) :23-29

[7] RAPID THERMAL-PROCESSING FOR SIMULTANEOUS ANNEALING OF SHALLOW IMPLANTED JUNCTIONS AND FORMATION OF THEIR TISI2 CONTACTS [J].

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[8]

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[9]

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[10]

REVESZ P, 1983, J APPL PHYS, V54, P1860, DOI 10.1063/1.332237

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