ELECTRON WAVE DIFFRACTION BY SEMICONDUCTOR GRATINGS - RIGOROUS ANALYSIS AND DESIGN PARAMETERS

被引：10
|
作者：
HENDERSON, GN [1 ]
GLYTSIS, EN [1 ]
GAYLORD, TK [1 ]
机构：
[1] GEORGIA INST TECHNOL,MICROELECTR RES CTR,ATLANTA,GA 30332
来源：
APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 04期
关键词：
FIELD-EFFECT TRANSISTOR; TRANSPORT; GAAS;
D O I：
10.1063/1.105456
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
An exact rigorous coupled-wave analysis has been developed to model ballistic electron wave diffraction by gratings with periodic effective mass and/or potential energy variations. Design expressions have been derived to calculate diffracted angles, to identify evanescent orders, and to identify the Bragg condition. Design expressions for Bragg regime (up to 100% diffraction efficiency in a single order) and Raman-Nath regime (high diffraction efficiency divided among multiple orders) diffraction are presented along with example Ga(1-x)Al(x)As grating designs. Design procedures for ballistic electron switches, multiplexers, spectrometers, and electron waveguide couplers are described.
引用
收藏
页码：440 / 442
页数：3
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