THE EFFECT OF ELECTRONIC FEEDBACK ON SEMICONDUCTOR-LASERS

被引：15
作者：
SHARAF, K
IBRAHIM, MM
机构：
[1] Electronic and Computer Engineering Department, Ain-Shams University, Abassia, Cairo
来源：
IEEE JOURNAL OF QUANTUM ELECTRONICS | 1990年 / 26卷 / 08期
关键词：
D O I：
10.1109/3.59681
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Negative electronic feedback (EFB) has a strong effect on the performance of a bistable laser diode amplifier and on injected-locked lasers. Negative EFB drastically reduces the switching-up input power level and the hysteresis in the input-output power characteristic and in the tuning curves of the bistable laser amplifier. Furthermore, negative EFB leads to a reduction in the time-delay associated with optical switching in diode laser amplifiers. This provides a means to enhance the versatility of the proposed system in some potential applications. For an injected-locked laser, negative EFB achieves a broadening in the locking bandwidth and its dynamically stable region. © 1990 IEEE
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页码：1347 / 1352
页数：6
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