P-TYPE CONDUCTIVITY CONTROL OF ZNSE HIGHLY DOPED WITH NITROGEN BY METALORGANIC MOLECULAR-BEAM EPITAXY

被引：45
|
作者：
TAIKE, A
MIGITA, M
YAMAMOTO, H
机构：
[1] Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185
来源：
APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 20期
关键词：
D O I：
10.1063/1.102996
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
p-type ZnSe with resistivity low enough for device application has been realized by metalorganic molecular beam epitaxy. This method has enabled growth of p-type ZnSe doped with nitrogen at concentrations as high as 1019 cm-3 by using ammonia as a dopant source. The dependence of photoluminescence and electrical properties on substrate temperature has been investigated. Hall measurements show p-type conductivity with a resistivity of 0.57 Ω cm, a carrier concentration of 5.6×1017 cm -3, and a Hall mobility of 20 cm2/V s.
引用
收藏
页码：1989 / 1991
页数：3
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