ELECTRON-SPIN-RESONANCE MEASUREMENTS OF SPIN SUSCEPTIBILITY OF HEAVILY DOPED TYPE SILICON

被引:46
作者
QUIRT, JD
MARKO, JR
机构
关键词
D O I
10.1103/PhysRevLett.26.318
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:318 / &
相关论文
共 17 条
[1]   SEMICONDUCTOR-TO-METAL TRANSITION IN N-TYPE SILICON [J].
ALEXANDER, MN ;
HOLCOMB, DF .
SOLID STATE COMMUNICATIONS, 1968, 6 (06) :355-+
[2]   DETERMINATION OF DONOR PAIR EXCHANGE ENERGY IN PHOSPHORUS-DOPED SILICON [J].
CULLIS, PR ;
MARKO, JR .
PHYSICAL REVIEW B-SOLID STATE, 1970, 1 (02) :632-&
[3]  
GERE EA, PRIVATE COMMUNICATIO
[4]   OVERHAUSER EFFECT IN METALLIC LITHIUM [J].
GUERON, M ;
RYTER, C .
PHYSICAL REVIEW LETTERS, 1959, 3 (07) :338-340
[5]   COMPARISON OF THERMAL BEHAVIOR OF VACUUM-CRUSHED AIR-CRUSHED AND MECHANICALLY POLISHED SILICON SURFACES BY ELECTRON PARAMAGNETIC RESONANCE [J].
HANEMAN, D ;
CHUNG, MF ;
TALONI, A .
PHYSICAL REVIEW, 1968, 170 (03) :719-&
[6]  
HOLCOMB DF, 1968, REV MOD PHYS, V40, P815
[7]   CONDUCTION ELECTRON SPIN SUSCEPTIBILITY OF METALLIC LITHIUM [J].
KETTLER, JE ;
SHANHOLT.WL ;
VEHSE, WE .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1969, 30 (03) :665-&
[8]  
MAEKAWA S, 1966, J PHYS SOC JPN, VS 21, P574
[9]   MODEL FOR METAL-NONMETAL TRANSITION IN IMPURE SEMICONDUCTORS [J].
MIKOSHIBA, N .
REVIEWS OF MODERN PHYSICS, 1968, 40 (04) :833-+
[10]   PIEZORESISTANCE AND MAGNETIC SUSCEPTIBILITY IN HEAVILY DOPED N-TYPE SILICON [J].
SASAKI, W ;
KINOSHITA, J .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1968, 25 (06) :1622-+