EFFECTS OF ELECTRON PREBUNCHING ON THE RADIATION GROWTH-RATE OF A COLLECTIVE (RAMAN) FREE-ELECTRON LASER-AMPLIFIER

被引：9
作者：
LEIBOVITCH, C
XU, KY
BEKEFI, G
机构：
[1] MIT,ELECTR RES LAB,CAMBRIDGE,MA 02139
[2] RAFAEL LAB,DIV SCI,DEPT APPL PHYS,IL-31021 HAIFA,ISRAEL
[3] CHENGDU INST RADIO ENGN,MICROWAVE ELECTR RES INST,CHENGDU,PEOPLES R CHINA
来源：
IEEE JOURNAL OF QUANTUM ELECTRONICS | 1988年 / 24卷 / 09期
关键词：
D O I：
10.1109/3.7122
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1825 / 1828
页数：4
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