ABRUPT GA1-XALXAS-GAAS QUANTUM-WELL HETEROSTRUCTURES GROWN BY METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION

被引：40
作者：
DUPUIS, RD
DAPKUS, PD
GARNER, CM
SU, CY
SPICER, WE
机构：
[1] Rockwell International, Electronic Devices Division, Electronics Research Center, Anaheim
[2] Stanford Electronics Laboratories, Stanford University, Stanford
来源：
APPLIED PHYSICS LETTERS | 1979年 / 34卷 / 05期
关键词：
D O I：
10.1063/1.90778
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Multiple-quantum-well Ga1-xAlxAs-GaAs heterostructures grown by metalorganic chemical vapor deposition have been analyzed by Auger electron spectroscopy combined with simultaneous argon-ion sputter etching. The chemical-interface widths of the Ga0.45Al 0.55As-GaAs heterojunctions are determined to be ≲17 Å. In addition, no Al is detected in the GaAs quantum wells.
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收藏
页码：335 / 337
页数：3
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