ELECTRON RELAXATION AND CAPTURE IN INGAASP QUANTUM-WELL LASER STRUCTURES

被引：10

作者：

MARCINKEVICIUS, S

OLIN, U

WALLIN, J

LANDGREN, G

机构：

[1] ROYAL INST TECHNOL,INST OPT RES,S-10044 STOCKHOLM,SWEDEN

[2] ROYAL INST TECHNOL,SEMICOND LAB,S-16440 KISTA,SWEDEN

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 23期

关键词：

D O I：

10.1063/1.113710

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Experimental investigations of electron relaxation in the confinement region and capture into the quantum wells are reported for InGaAsP/InP laser structures. The measurements are performed by time-resolved photoluminescence using upconversion. The value for the electron capture of 1.4 ps is obtained. No dependence on the potential profile of confining layers has been observed.© 1995 American Institute of Physics.

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页码：3164 / 3166

页数：3

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